Method of etching a metal line
OwnerChun-Feng Nieh, Ching-Fan Wang +2inventors
InventorsChun-Feng Nieh, Ching-Fan Wang, Fung-Hsu Cheng, Zhen-Long Chen
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Abstract
A method of etching a metal line. A substrate with a metal layer to be etched is provided, on which an amorphous carbon doped layer is formed over the metal layer by plasma enhanced chemical vapor deposition (PECVD). A resist layer is formed over the amorphous carbon doped layer, and the resist layer is patterned to define a resist mask. The amorphous carbon doped layer is etched to define a hardmask, the resist mask is stripped, and the metal layer not covered by the hardmask is etched to form a metal line for forming an interconnect.
Claims13
A method of etching a metal line, comprising:
- providing a substrate with a metal layer to be etched;
- forming an amorphous carbon doped layer over the metal layer;
- forming a resist layer over the amorphous carbon doped layer;
- patterning the resist layer to define a resist mask;
- etching the amorphous carbon doped layer not covered by the resist mask to define a hardmask;
- stripping the resist mask;
- and
- etching the metal layer not covered by the hardmask to form a metal line.
A method of etching a metal line, comprising:
- providing a substrate with a metal layer, having a three-sub-layered layer having a second TiN/Ti sub-layer stacked on an Al-(approximately 0.5 wt %)Cu alloy sub-layer on a first TiN/Ti sub-layer, to be etched;
- forming an amorphous carbon doped layer over the metal layer;
- forming a resist layer over the amorphous carbon doped layer;
- patterning the resist layer to define a resist mask;
- etching the amorphous carbon doped layer not covered by the resist mask to define a hardmask;
- stripping the resist mask;
- etching the metal layer not covered by the hardmask to form a metal line;
- and
- ashing the hardmask to expose the metal line.
Dependencies are inferred from the claim text.