Conductors created by metal deposition using a selective passivation layer and related methods

A method for making a conductor structure for electronic component applications formed by metal deposition, comprising the steps of:

• selecting a substrate having at least one exposed surface;
• depositing a first conducting layer on the exposed surface of the substrate, the first conducting layer having an exposed surface not in contact with the previously exposed surface of the substrate;
• depositing a selective passivation layer capable of penetration by previously selected materials and not penetrable by other selected materials on the exposed surface of the first conducting layer;
• and
• depositing a second conducting layer comprising a material capable of penetrating the selectively passivating layer and permeating therethrough, and
• displacing the selectively passivating layer with the second conducting layer such that the first and second conducting layers are adhered while additional protected from other ambient conditions by the selective passivation layer.

A conductive structure comprising:

• a first conductor;
• a plurality of atomic layers of a second conductor directly on the first conductor;
• and
• a first material directly on the plurality of atomic layers of the second conductor, remote from the first conductor, the first material being penetrable by the plurality of atomic layers of the second conductor relative to at least a second material other than the second conductor.

A conductive structure comprising:

• a first layer comprising ruthenium;
• a second layer comprising a plurality of atomic layers of copper directly on the first layer comprising ruthenium;
• and
• a third layer comprising iodine directly on the second layer comprising a plurality of atomic layers of copper, remote from the first layer comprising ruthenium.