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AssigneeMacronix International Co., Ltd.
InventorsSHANG-PING LIN, TSUNG-YI CHOU, CHUN-YI YANG, HSIANG-PANG LEE
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A method of fabricating a mask ROM is provided. gate dielectric and a plurality of first conductive strips are sequentially formed over a substrate. A first dielectric layer is formed over the substrate and the first conductive strips. The first dielectric layer is patterned to form a plurality of first coding openings. Each first coding opening exposes the first conductive layer. A plurality of first wells is formed in the first conductive layer at the bottom of the first coding openings. A plurality of second conductive strips is formed over the first dielectric layer and inside the first coding openings to connect electrically with corresponding first wells and form a diode memory cell array. Additional diode memory cell arrays may stack over the diode memory cell array to increase device integration.
A method of fabricating a mask read-only-memory, comprising the steps of:
A mask read-only-memory structure, comprising:
A method of decoding a mask read-only-memory (ROM), wherein the mask ROM at least includes a plurality of word lines, a plurality of wells over the respective word lines such that the word lines have a doping state (N+ type) that differs from the wells (P+ type) and a plurality of bit lines such that the bit lines are aligned in a direction perpendicular to the word lines and that the bit lines and the word lines are on separate planes, and some of the junctions between the bit line and the word line are electrically connected to corresponding well, the decoding method includes:
Dependencies are inferred from the claim text.