Method of fabricating flash memory
OwnerPei-Ren Jeng, Tzung-Ting Han +2inventors
InventorsPEI-REN JENG, TZUNG-TING HAN, JUNG-YU HSIEH, JUNE-MIN YAO
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Abstract
A method of fabricating a flash memory. A tunneling dielectric layer and a conductive layer are formed on a substrate. The conductive layer is patterned to form a floating gate. A source/drain region is formed in the substrate between the floating gates. A gate dielectric layer is formed. The gate dielectric layer includes an oxide layer formed on the floating gate by in-situ steam generation (ISSG). A control gate is formed on the gate dielectric layer.
Claims20
A method of fabricating a flash memory, comprising:
- forming a tunneling dielectric layer on a substrate;
- forming a conductive layer on the tunneling dielectric layer;
- patterning the conductive layer into a floating gate;
- forming a source/drain region in the substrate at respective sides of the floating gate;
- forming a gate dielectric layer on the floating gate, the gate dielectric layer including a first silicon oxide layer formed by in-situ steam generation;
- and
- forming a control gate on the gate dielectric layer.
A method of fabricating a flash memory, comprising:
- forming a tunneling dielectric layer on a substrate;
- forming a conductive layer on the tunneling dielectric layer;
- patterning the conductive layer into a floating gate;
- forming a source/drain region in the substrate at respective sides of the floating gate;
- performing an oxygen free radical reaction to form a bottom oxide layer on the floating gate;
- forming a silicon nitride layer on the bottom oxide layer;
- forming a top oxide layer on the silicon nitride layer;
- and
- forming a control gate on the top silicon oxide layer.
A method of fabricating a gate dielectric layer, comprising using an oxygen free radical reaction process to form an oxide layer on a polysilicon layer.
Dependencies are inferred from the claim text.