Thyristor switch for microwave signals
AssigneeTeraburst Networks, Inc.
InventorsJules D. Levine, Ross LaRue, Thomas Holden, Stanley Freske
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Abstract
A thyristor for switching microwave signals includes semiconductor layers disposed on a substrate. A first surface of the thyristor defines an anode, and a second surface of the thyristor defines a cathode. The semiconductor layers include at least one semi-insulating layer. The thyristor transmits a microwave signal between the anode and the cathode in an ON state and blocks the microwave signal between the anode and the cathode in an OFF state.
Claims32
A thyristor for switching microwave signals, comprising:
- a plurality of semiconductor layers disposed on a substrate, a first surface of the thyristor defining an anode, a second surface of the thyristor defining a cathode, and the semiconductor layers including at least one semi-insulating layer, wherein
- the thyristor transmits a microwave signal between the anode and the cathode in an ON state and blocks the microwave signal between the anode and the cathode in an OFF state.
A thyristor for switching microwave signals, comprising:
- a first layer disposed on a substrate, the first layer including semiconductor material doped as n+, and a surface of the first layer defining an anode;
- a second layer disposed on the first layer, the second layer including semiconductor material doped as p;
- a third layer disposed on the second layer, the third layer including semiconductor material doped as a semi-insulating layer;
- a fourth layer disposed on the third layer, the fourth layer including semiconductor material doped as n;
- a fifth layer disposed on the fourth layer, the fifth layer including semiconductor material doped as a semi-insulating layer;
- a sixth layer disposed on the fifth layer, the sixth layer including semiconductor material doped as p+, and a surface of the sixth layer defining a cathode, wherein
- the thyristor transmits a microwave signal between the anode and the cathode in an ON state and blocks the microwave signal between the anode and the cathode in an OFF state.
A thyristor for switching microwave signals, comprising:
- a first layer disposed on a substrate, the first layer including semiconductor material doped as p+, and a surface of the first layer defining an anode;
- a second layer disposed on the first layer, the second layer including semiconductor material doped as n;
- a third layer disposed on the second layer, the third layer including semiconductor material doped as a semi-insulating layer;
- a fourth layer disposed on the third layer, the fourth layer including semiconductor material doped as p;
- a fifth layer disposed on the fourth layer, the fifth layer including semiconductor material doped as a semi-insulating layer;
- a sixth layer disposed on the fifth layer, the sixth layer including semiconductor material doped as n+, and a surface of the sixth layer defining a cathode, wherein
- the thyristor transmits a microwave signal between the anode and the cathode in an ON state and blocks the microwave signal between the anode and the cathode in an OFF state.
A method for making a thyristor for switching microwave signals, comprising:
- growing a plurality of semiconductor layers on an upper surface of a substrate, the semiconductor layers including at least one semi-insulating layer;
- etching a thyristor in the semiconductor layers, the thyristor being configured as a mesa having an upper conducting surface and a lower conducting surface, wherein
- the thyristor transmits a microwave signal between the upper conducing surface and the lower conducting surface in an ON state and blocks the microwave signal between the upper conducting surface and the lower conducting surface in an OFF state.
Dependencies are inferred from the claim text.