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US 2004/0166597 A1Published application
Directed gas injection apparatus for semiconductor processing
AssigneeTokyo Electron Limited
InventorEric J. Strang
Life of this patent
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Abstract
A method and system for utilizing a gas injection plate comprising a number of shaped orifices (e.g., sonic and simple orifices, and divergent nozzles) in the gas inject system as part of a plasma processing system. By utilizing the shaped orifices, directionality of gas flow can be improved. This improvement is especially beneficial in high aspect ratio processing.
Claims17
A method of operating a manufacturing system, wherein the manufacturing system comprises material processing system, transfer system, and process controller, the method comprising:
- determining a process type;
- selecting a gas injection plate based on the process type;
- transferring the gas injection plate into the material processing system using a transfer system coupled to the material processing system;
- coupling the gas injection plate to a gas supply system;
- and
- processing a substrate based on the process type.
3 more elements
A manufacturing system comprising:
- material processing system having a gas supply system;
- transfer system coupled to the material processing system;
- and
- process controller coupled to the materials processing system and to the transfer system, wherein the process controller determines a process type, selects a gas injection plate based on the process type, transfers the gas injection plate into the material processing system using the transfer system, couples the gas injection plate to the gas supply system;
- and processes a substrate based on the process type.
2 more elements
Dependencies are inferred from the claim text.