Method for shrinking the image of photoresist
AssigneeUnited Microelectronics Corp.
InventorsVencent Chang, George Liu, Chia-Chen Chen, Benjamin Szu-Min Lin, Cheng-Chung Chen
Life of this patent
Estimating the term…
Abstract
First of all, a semiconductor substrate with a photoresist layer thereon is provided. Then a photoresist region is formed on the semiconductor substrate by a photolithography process. Next, a chemical reaction layer is formed within the photoresist region. Subsequently, a developing process is performed to remove the chemical reaction layer within the photoresist region to shrink the photoresist region in line width on the semiconductor substrate.
Claims20
A method for shrinking the image of photoresist, the method comprising:
- providing a substrate;
- forming a photoresist layer on said substrate;
- exposing said photoresist layer to form a first photoresist region and a second photoresist region;
- forming a chemical diffusion layer on said first photoresist region and said second photoresist region;
- baking said chemical diffusion layer, said first photoresist region and said second photoresist region;
- and
- developing said chemical diffusion layer, said first photoresist region and said second photoresist region.
A method for shrinking the image of photoresist, the method comprising:
- providing a substrate;
- F
- forming a photoresist layer on said substrate;
- F
- forming a chemical diffusion layer on said photoresist layer;
- exposing said photoresist layer to form a first photoresist region and a second photoresist region;
- baking said chemical diffusion layer, said first photoresist region and said second photoresist region;
- and
- developing said chemical diffusion layer, said first photoresist region and said second photoresist region.
Dependencies are inferred from the claim text.