Method for shrinking pattern photoresist

A method for shrinking the pattern photoresist, the method comprising:

• providing a semiconductor substrate;
• forming a photoresist layer with a first chemical polarity on said semiconductor substrate;
• forming a plurality of pattern photoresists with a first line width on said semiconductor substrate by said photoresist layer;
• forming a plurality of diffusion layers with a acid-based material on said plurality of pattern photoresists;
• diffusing said acid-based material from said plurality of diffusion layers into said plurality of pattern photoresists such that said plurality of pattern photoresists are reacted with said acid-based material by using a chemical reaction to form a plurality of reaction layers having a second chemical polarity within the skin layer of said plurality of pattern photoresists;
• and
• removing said plurality of reaction layers to trim said first line width to form a second line width of said plurality of pattern photoresists on said semiconductor substrate.

A method for shrinking the pattern photoresist, the method comprising:

• providing a semiconductor substrate;
• forming a photoresist layer with a hydrophobic polarity on said semiconductor substrate;
• performing an exposure process to define a plurality of pattern regions with a first line width in said photoresist layer;
• performing a first developing process to form a plurality of pattern photoresists with a first line width on said semiconductor substrate located in said plurality of pattern regions;
• performing an acid-process to conform a diffusion layer having an acid-based material on said plurality of pattern photoresists and said semiconductor substrate;
• performing a baking process to diffuse said acid-based material from said diffusion layer into said plurality of pattern photoresists such that said plurality of pattern photoresists chain-react with said acid-based material to transform said hydrophobic polarity into a hydrophilic polarity within said plurality of pattern photoresists and form a plurality of reaction layers having said hydrophilic polarity within the skin layer of said plurality of pattern photoresists;
• and
• performing a second developing process to remove said plurality of reaction layers and trim said first line width to form a second line width of said plurality of pattern photoresists on said semiconductor substrate.