Method for fabricating a thin line structure, multilayered structure and multilayered intermediate structure
AssigneeNagoya University
InventorsAkira Sakai, Shigeaki Zaima, Yukio Yasuda, Osamu Nakatsuka
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Abstract
On a given silicon substrate is epitaxially grown a strain-relaxed silicon germanium layer with penetrated dislocations and formed a metallic layer to form a multilayered intermediate structure, which is heated. In this case, metallic elements of the metallic layer are diffused through the penetrated dislocations of the silicon germanium layer to form a thin line structure made of metallic silicide at a boundary face between the silicon base and the silicon germanium layer.
Claims19
A method for fabricating a thin line structure, comprising the steps of:
- preparing a given silicon base,
- forming, on said silicon base, a strain-relaxed silicon germanium layer with penetrated dislocations,
- forming a metallic layer on said silicon germanium layer to form a multilayered intermediate structure which is made of said silicon base, said silicon germanium layer and said metallic layer,
- and
- heating said multilayered intermediate structure to diffuse metallic elements of said metallic layer through said penetrated dislocations of said silicon germanium layer and to form a thin line structure made of metallic silicide at a boundary face between said silicon base and said silicon germanium layer.
A multilayered structure comprising:
- a given silicon base,
- a strain-relaxed silicon germanium layer with penetrated dislocations which is formed on said silicon base,
- and
- a thin line structure made of metallic silicide which is formed at a boundary face between said silicon base and silicon germanium layer.
A multilayered intermediate structure comprising:
- a given silicon base,
- a strain-relaxed silicon germanium layer with penetrated dislocations which is formed on said silicon base,
- and
- a metallic layer which is formed on said silicon germanium layer.
Dependencies are inferred from the claim text.