Substrate treating method and apparatus
AssigneeDainippon Screen Mfg. Co., Ltd.
InventorAtsushi Osawa
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Abstract
A substrate treating method and apparatus are disclosed, which are capable of treating substrates having a material of high dielectric constant, reliably at a relatively low temperature. A treating solution containing sulfuric acid (H2SO4) and hydrofluoric acid (HF) or sulfuric acid (H2SO4) and buffered hydrofluoric acid (NH4F.HF) is used for treating substrates coated with a film including the material of high dielectric constant. The material of high dielectric constant may be treated selectively by the treating solution at the relatively low temperature.
Claims16
A substrate treating method wherein a substrate coated with a film including a material of high dielectric constant is treated with a treating solution containing sulfuric acid (H2SO4) and hydrofluoric acid (HF).
A substrate treating method wherein a substrate coated with a film including a material of high dielectric constant is treated with a treating solution containing sulfuric acid (H2SO4) and buffered hydrofluoric acid (NH4F.HF).
A substrate treating apparatus for treating a substrate coated with a film including a material of high dielectric constant, said apparatus comprising:
- a treating unit for receiving said substrate for treatment;
- treating solution supply means for supplying a treating solution containing sulfuric acid (H2SO4) and hydrofluoric acid (HF) into said treating unit;
- and
- heating means for heating said treating solution.
A substrate treating apparatus for treating a substrate coated with a film including a material of high dielectric constant, said apparatus comprising:
- a treating unit for receiving said substrate for treatment;
- treating solution supply means for supplying a treating solution containing sulfuric acid (H2SO4) and buffered hydrofluoric acid (NH4F—HF) into said treating unit;
- and
- heating means for heating said treating solution.
Dependencies are inferred from the claim text.