Method for evaluating lithography system, method for adjusting substrate-processing apparatus, lithography system, and exposure apparatus
AssigneeNikon Corporation
InventorYuji Imai
Life of this patent
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AssigneeNikon Corporation
InventorYuji Imai
Estimating the term…
When the ordinary exposure is performed, a wafer, to which a photoresist is applied by a resist coater, is transported onto a wafer stage of a projection exposure apparatus to perform the exposure, followed by development by a developing apparatus. When the characteristic is evaluated, respective shot areas on the wafer applied with the photoresist are exposed with an image of a predetermined evaluating mark in a narrow area in an effective field of a projection optical system of the projection exposure apparatus. The characteristic of the resist coater or the developing apparatus is evaluated by detecting a state of a resist pattern after the development. When the image formation characteristic of the projection exposure apparatus is evaluated, the wafer is exposed with images of a plurality of predetermined evaluating marks in a wide area in the effective field. The respective characteristics of the resist coater, the exposure apparatus, and the developing apparatus for constructing a lithography system can be evaluated respectively independently.
A lithography system which forms a predetermined development pattern on a substrate applied with a photosensitive material, the lithography system comprising:
An exposure apparatus which exposes a substrate applied with a photosensitive material with a light beam via a mask, the exposure apparatus comprising:
Dependencies are inferred from the claim text.