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US 2004/0164418 A1Published application
Semiconductor device having a pillar structure
AssigneeFujitsu Limited
InventorsIwao Sugiura, Takahisa Namiki, Yoshihiro Matsuoka
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Abstract
A semiconductor device includes a first multilayer interconnection structure formed on a substrate and a second multilayer interconnection structure formed on the first multilayer interconnection structure, wherein the first multilayer interconnection structure includes a pillar extending from a surface of the substrate and reaching at least the second multilayer interconnection structure.
Claims28
A semiconductor device, comprising:
- a substrate;
- a first multilayer interconnection structure formed on said substrate;
- and
- a second multilayer interconnection structure formed on said first multilayer interconnection structure,
- said first multilayer interconnection structure including a first interlayer insulation film and a first interconnection layer included in said first interlayer insulation film;
- said second multilayer interconnection structure including a second interlayer insulation film and a second interconnection layer included in said second interlayer insulation film,
- said first multilayer interconnection structure including a pillar extending from a surface of said substrate and reaching at least said second multilayer interconnection structure,
- said first interconnection layer being formed so as to avoid said pillar.
5 more elements
A multilayer interconnection structure comprising stacking of at least two interconnection layers with an intervening via-layer,
- each of said interconnection layers comprising an interlayer insulation film and an interconnection pattern formed in said interlayer insulation film,
- said via-layer comprising a via-interlayer insulation film and a via-plug formed in said via-interlayer insulation film,
- said via-plug connecting said interconnection pattern in said interconnection layer located on said via-layer to said interconnection pattern in said interconnection layer located under said via-layer,
- said interlayer insulation film forming said via-layer having a smaller film thickness and a larger elastic modulus than any of said interlayer insulation films constituting said interconnection layers on and under said via-layer.
1 more element
A semiconductor device comprising
- a substrate;
- a first multilayer interconnection structure formed on said substrate;
- and
- a second multilayer interconnection structure formed on said first multilayer interconnection structure,
- said first multilayer interconnection structure including stacking of at least two interconnection layers with an intervening via-layer,
- each of said interconnection layers comprising an interlayer insulation film and an interconnection pattern formed in said interlayer insulation film,
- said via-layer comprising a via-interlayer insulation film and a via-plug formed in said via-interlayer insulation film,
- said via-plug connecting said interconnection pattern in said interconnection layer located on said via-layer and said interconnection pattern in said interconnection layer located under said via-layer,
- said via-interlayer insulation film constituting said via layer having a smaller film thickness and a larger elastic modulus than any of said interlayer insulation films constituting said interconnection layers located on and under said via-layer,
- said interconnection pattern in each interconnection layer and said via-plug in each via-layer extending, in said first interlayer insulation film, continuously from said substrate surface through said first multilayer interconnection structure and forming a pillar at least reaching said second multilayer interconnection structure.
7 more elements
A semiconductor device, comprising:
- a substrate;
- and
- a multilayer interconnection structure formed on said substrate,
- a plurality of pillars being formed in said multilayer interconnection structure so as to reach a surface of said substrate;
- a reinforcement structure being formed in said multilayer interconnection structure diagonally among said plurality of pillars.
2 more elements
Dependencies are inferred from the claim text.