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US 2004/0164313 A1Published application
Trench capacitor with buried strap
AssigneeInfineon Technologies AG
InventorsHelmut Tews, Jochen Beintner, Stephan Kudelka
Life of this patent
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Abstract
A trench capacitor with improved strap is disclosed. The strap is located above the top surface of the capacitor. The top surface of the trench capacitor which is formed by the top surfaces of the collar and storage plate, is planar. By locating the strap on a planar surface, the divot present in conventional strap processes is avoided. This results in improved strap reliability and device performance.
Claims14
An integrated circuit (IC) having a trench capacitor comprising:
- a trench formed in a substrate having upper and lower portions, the trench capacitor located on the lower portion of the trench, the lower portion separated into top and bottom sections;
- a storage plate of the capacitor located in the lower portion of the trench;
- a dielectric layer in the bottom section of the trench separating the storage plate and the substrate;
- a dielectric collar lining sidewall of the top section of the lower portion of the trench, wherein a top surface of the capacitor is substantially planar and is formed by top surfaces of the dielectric collar and top surface of the storage plate;
- and
- a strap located on at least a portion of the top surface of the capacitor.
3 more elements
A method for fabricating a trench capacitor comprising:
- providing a substrate including a trench having upper portion and lower portions, the substrate is prepared with a trench capacitor in the lower portion of the trench, a top surface of the trench capacitor comprising a planar surface;
- and
- forming a buried strap above the top surface of the trench capacitor, wherein the planar top surface of the trench capacitor eliminates divot present in conventional process for forming trench capacitors.
Dependencies are inferred from the claim text.