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US 2004/0163761 A1Published application
Directed gas injection apparatus for semiconductor processing
AssigneeTokyo Electron Limited
InventorEric J Strang
Life of this patent
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Abstract
A method and system (1) for utilizing shaped orifices (e.g., sonic and simple orifices, and divergent nozzles) in the gas inject system (20) as part of a plasma process system. By utilizing the shaped orifices, directionality of gas flow (25) can be improved. This improvement is especially beneficial in high aspect ratio processing.
Claims29
A material processing system for processing a substrate, comprising:
- a processing chamber;
- a vacuum pump coupled to the processing chamber;
- a gas injection system comprising a gas injection plate including a plurality of shaped gas injection orifices for injecting a gas into the processing chamber substantially normal to a surface of the substrate;
- and
- a process controller coupled to the processing chamber, the vacuum pump, and the gas injection system for controlling the processing of the substrate by maximizing the number of particles proximate the surface of the substrate moving in a direction substantially normal to the surface of the substrate.
2 more elements
A method of processing a substrate in a plasma processing environment, the method comprising:
- positioning a gas injection plate at a distance from the top surface of the substrate;
- driving the processing gas through plural shaped gas injects in the gas injection plate;
- applying RF power to the processing gas driven through the plural shaped gas injects to form a plasma;
- and
- performing at least one of an etch and a deposition on a substrate.
2 more elements
A gas injection plate, having a plurality of gas injection orifices, prepared by a method comprising:
- etching a plurality of first features into a first surface of a plate substrate;
- and
- etching a plurality of second features through the plate substrate, wherein, a gas injection orifice comprises a first feature having a depth of at least one half of the plate substrate thickness and a second feature comprising a through hole from the second surface to the first feature.
Dependencies are inferred from the claim text.