Method and apparatus for megasonic cleaning of patterned substrates
AssigneeLam Research Corporation
InventorsJohn M. Boyd, Michael Ravkin, Fred C. Redeker
Life of this patent
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Abstract
A method for cleaning a semiconductor substrate is provided. The method initiates with generating acoustic energy oriented in a substantially perpendicular direction to a surface of a semiconductor substrate. Then, acoustic energy oriented in a substantially parallel direction to the surface of the semiconductor substrate is generated. Each orientation of the acoustic energy may be simultaneously generated or alternately generated. A system and an apparatus for cleaning a semiconductor substrate are also provided. Additionally, a method and a system for electroless plating are provided.
Claims25
A method for cleaning a semiconductor substrate, comprising:
- generating acoustic energy oriented in a substantially perpendicular direction to a surface of a semiconductor substrate;
- and
- generating acoustic energy oriented in a substantially parallel direction to the surface of the semiconductor substrate.
An apparatus for cleaning a semiconductor substrate, comprising:
- a base;
- at least one sidewall extending from the base, the sidewall being substantially perpendicular to the base;
- a first megasonic transducer affixed to the base;
- and
- a second megasonic transducer affixed to the sidewall, wherein the first megasonic transducer is oriented in a substantially orthogonal manner relative to the second megasonic transducer.
A system for cleaning a semiconductor substrate, comprising:
- a tank having an inner cavity defined by a base and at least one sidewall extending therefrom, the tank configured to retain a volume of a liquid within the inner cavity;
- a substrate support configured to support and rotate a semiconductor substrate about an axis of the semiconductor substrate, the substrate support further configured to support and rotate the semiconductor substrate in the inner cavity of the tank;
- a first megasonic transducer coupled to the base, a top surface of the megasonic transducer being substantially parallel to a bottom surface of the semiconductor substrate;
- and
- a second megasonic transducer coupled to the at least one sidewall, wherein the first megasonic transducer is configured to generate acoustic energy associated with a direction substantially perpendicular to the bottom surface of the semiconductor substrate and wherein the second megasonic transducer is configured to generate acoustic energy associated with a direction substantially parallel to the bottom surface of the semiconductor substrate.
A method for electroless plating of a substrate, comprising:
- immersing a substrate into a plating solution;
- depositing a film onto a surface of the substrate;
- and
- transferring acoustic energy to the plating solution, the acoustic energy directed at the surface of the substrate to control bubble formation at the surface of the substrate.
An apparatus for electroless plating of a substrate, comprising:
- a tank configured to retain a plating solution;
- and
- a transducer configured to transfer acoustic energy to the plating solution.
Dependencies are inferred from the claim text.