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US 2004/0163324 A1Published application
CMP slurry polysilicon and method of forming semiconductor device using the same
OwnerSang Ick Lee, Hyung Hwan Kiminventors
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Abstract
A Chemical Mechanical Polishing(abbreviated as “CMP”) slurry composition for polysilicon and method of forming a self-aligned floating gate of a flash memory device are disclosed for performing CMP process using slurry having higher polishing selectivity to polysilicon than to isolation oxide film which is an etching barrier film.
Claims10
A CMP slurry composition for polysilicon comprising:
- a solvent, an abrasive and an additive,
- the additive comprising at least one of ammonium hydroxide and amine compound, the amine compound having a functional group selected from the group consisting of —N(OH), —NH(OH) and —NH2(OH),
- wherein the composition has pH ranging from 8 to 11.
Dependencies are inferred from the claim text.