Method of etching uniform silicon layer
AssigneeAu Optronics Corporation
InventorsChien-Chou Hou, Ching-Te Huang, Li-Wei Hwang, Shih-Kun Chen
Life of this patent
Estimating the term…
Abstract
A method of etching a silicon layer to avoid non-uniformity. First, a patterned silicon layer is provided. Next, an etching buffer layer is conformally formed on the surface and the top layer of the patterned silicon layer. Finally, the etching buffer layer and the patterned silicon layer are etched until the thickness of the patterned silicon layer is reduced. The conformal oxide layer provides etching resistance as an etching buffer layer, such that the etching rate is uniform on the whole subject matter, thereby, reducing the thickness of the patterned silicon layer uniformly after etching.
Claims20
A method of etching an uniform silicon layer, comprising:
- providing a patterned silicon layer;
- forming an etching buffer layer conformally on the surface and the top layer of the patterned silicon layer;
- and
- etching the etching buffer layer and the patterned silicon layer until the thickness of the patterned silicon layer is reduced.
A method of etching an uniform silicon layer, comprising:
- providing a silicon layer;
- forming a mask with patterns on the silicon layer;
- performing a first etching to pattern the silicon layer using the mask as a shield, to form a patterned silicon layer with patterns;
- removing the mask;
- forming an etching buffer layer conformally on the surface and the top layer of the patterned silicon layer;
- and
- performing a second etching to remove the etching buffer layer and reduce the thickness of the patterned silicon layer.
A method of etching a silicon layer to avoid non-uniformity, comprising:
- providing a silicon layer;
- forming a mask with patterns on the silicon layer;
- performing a first etching to pattern the silicon layer using the mask as a shield, to form a patterned silicon layer with patterns;
- removing the mask;
- introducing a gas containing oxygen treatment to conformally form an etching buffer layer on the surface and the top layer of the patterned silicon layer;
- and
- performing a second etching to remove the etching buffer layer and reduce the thickness of the patterned silicon layer.
Dependencies are inferred from the claim text.