Signal layer for generating characteristic optical plasma emissions

An integrated circuit chip having a semiconductor structure including at least one electrical device, said semiconductor structure being manufactured by forming a signal layer on or in a wafer, applying an etch plasma to the surface of said wafer, and performing a plasma etch endpoint process when a characteristic optical emission is detected, wherein said signal layer comprises a chemical element that causes said characteristic optical emission when coming into contact with said etch plasma, and said chemical element does not have a primary influence on the electrical properties of said at least one electrical device.

An apparatus for manufacturing a semiconductor structure, the apparatus being adapted for forming a stop layer providing an etch plasma resistance effecting a low plasma etch rate, said stop layer comprising a chemical signal element, wherein said chemical signal element causes a characteristic optical emission when coming into contact with an etch plasma, said stop layer being for use in a plasma etch process to detect a plasma etch endpoint if said characteristic optical emission is detected.

A system having a layer forming tool and a plasma etch tool for manufacturing a semiconductor structure, the tools being adapted for forming a patterned signal layer on or in a wafer;

• applying an etch plasma to the surface of said wafer, and performing a plasma etch endpoint process when a characteristic optical emission is detected, wherein said patterned signal layer comprises a chemical element that causes said characteristic optical emission when coming into contact with said etch plasma;
• said patterned signal layer being for use in a plasma etch process to detect a plasma etch endpoint if said characteristic optical emission is detected.

An apparatus for manufacturing a semiconductor structure including at least one electrical device, the apparatus being adapted for forming a signal layer on or in a wafer, wherein said signal layer comprises a chemical element that causes a characteristic optical emission when coming into contact with an etch plasma, said chemical element having no primary influence on the electrical properties of said at least one electrical device, said signal layer being for use in a plasma etch process to detect a plasma etch endpoint if said characteristic optical emission is detected.