Re-oxidation process of semiconductor device
AssigneeMacronix International Co., Ltd.
InventorsJui-Neng Tu, June-Min Yao
Life of this patent
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Abstract
A re-oxidation process of a semiconductor device is described. A substrate having a stacked structure thereon is provided, wherein the stacked structure includes a polysilicon/tungsten suicide interface. A thin CVD oxide layer is formed on the substrate and the stacked structure with a chemical vapor deposition (CVD) process. Then, an oxidation process is performed to form a thermal oxide layer on the substrate and the stacked structure.
Claims20
A re-oxidation process of a semiconductor device, comprising:
- providing a substrate having a stacked structure thereon, wherein the stacked structure includes a polysilicon/tungsten silicide interface;
- forming a CVD oxide layer on the substrate and the stacked structure with a chemical vapor deposition (CVD) process;
- and
- performing an oxidation process to form a thermal oxide layer on the substrate and the stacked structure.
A method for fabricating a semiconductor device, comprising:
- sequentially forming a tunneling layer, a first polysilicon layer, an inter-poly dielectric layer, a second polysilicon layer and a tungsten silicide layer on a substrate;
- sequentially patterning the tungsten silicide layer, the second polysilicon layer, the inter-poly dielectric layer and the first polysilicon layer to form a stacked gate;
- forming a CVD oxide layer on the substrate and the stacked gate with a chemical vapor deposition (CVD) process;
- and
- performing an oxidation process to form a thermal oxide layer on the substrate and the stacked gate.
A re-oxidation process of a semiconductor device, comprising:
- providing a substrate having a stacked structure thereon, wherein the stacked structure includes a polysilicon/metal silicide interface;
- forming a CVD oxide layer on the substrate and the stacked structure with a chemical vapor deposition (CVD) process;
- and
- performing an oxidation process to form a thermal oxide layer on the substrate and the stacked structure.
Dependencies are inferred from the claim text.