Method for constructing a metal oxide semiconductor field effect transistor

A semiconductor device, comprising:

• an outer surface of a semiconductor layer defining a trench isolation structure and an active region;
• an epitaxial layer deposited outwardly from the trench isolation structure;
• a first insulator layer grown outwardly from the epitaxial layer;
• a second insulator layer grown outwardly from the first insulator layer;
• a gate stack formed outwardly from the epitaxial layer, the gate stack comprising a portion of the first insulator layer, a portion of the second insulator layer, and a gate formed proximate the second insulator layer, the gate having a narrow region and a wide region;
• and
• a source/drain implant region in the active region formed by heating the epitaxial layer to a temperature sufficient to allow for the epitaxial layer to form the source/drain implant region.

A semiconductor device, comprising:

• an outer surface of a semiconductor layer forming a trench isolation structure and an active region, the trench isolation structure comprising silicon dioxide;
• an epitaxial layer comprising silicon of a thickness of approximately 1,000 angstroms to 3,000 angstroms deposited outwardly from the trench isolation structure;
• a first insulator layer comprising silicon dioxide grown outwardly from the epitaxial layer;
• a second insulator layer comprising silicon nitride grown outwardly from the first insulator layer;
• a third insulator layer comprising silicon dioxide formed outwardly from the second insulator layer;
• a gate stack formed outwardly from the epitaxial layer, the gate stack comprising a portion of the first insulator layer, a portion of the second insulator layer, a portion of the third insulator layer, and a gate formed proximate the third insulator layer, the gate having a narrow region and a wide region, a length of the narrow region of the gate approximately one-tenth microns to two microns, a width of the narrow region of the gate approximately 25 microns to 100 microns, a length of the wide region of the gate approximately two-tenths microns to two microns greater than a length of the narrow region of the gate;
• and
• a source/drain implant region in the active region formed by heating the epitaxial layer to a temperature sufficient to allow for the epitaxial layer to form the source/drain implant region.