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AssigneeInternational Business Machines Corporation
InventorsKlaus D. Beyer, Fen F. Jamin, Patrick R. Varekamp
Estimating the term…
An oxynitride material is used to form shallow trench isolation regions in an integrated circuit structure. The oxynitride may be used for both the trench liner and trench fill material. The oxynitride liner is formed by nitriding an initially formed oxide trench liner. The oxynitride trench fill material is formed by directly depositing a high density plasma (HDP) oxide mixture of SiH4 and O2 and adding a controlled amount of NH3 to the plasma mixture. The resultant oxynitride structure is much more resistant to trench fill erosion by wet etch, for example, yet results in minimal stress to the surrounding silicon. To further reduce stress, the nitrogen concentration may be varied by varying the proportion of O2 to NH3 in the plasma mixture so that the nitrogen concentration is maximum at the top of the fill material.
A method for forming a semiconductor structure, comprising the steps of:
A method of forming an isolation structure for a semiconductor device, comprising the steps of:
A method of forming an isolation structure for a semiconductor device, comprising:
A method of forming an isolation structure for a semiconductor device, comprising:
A method of forming an isolation structure for a semiconductor device, comprising:
A semiconductor device trench isolation structure, comprising a substrate having a trench region filled with an oxynitride material to form an oxynitride trench plug with the nitrogen concentration of said oxynitride material being greater at the top portion of said trench plug than at the bottom portion of said trench plug.
A semiconductor device trench isolation structure, comprising:
A semiconductor device trench isolation structure, comprising a substrate having a trench region lined with an oxynitride liner with the portion of the sidewalls of said oxynitride liner at the top of said trench region having a nitrogen concentration greater than the nitrogen concentration of the sidewalls in the lower portion of said trench region, and with said trench region lined therein with said oxynitride liner filled with an oxynitride fill material to form an oxynitride trench plug with the nitrogen concentration of said oxynitride fill material being greater at the top portion of said oxynitride trench plug than at the bottom portion of said oxynitride trench plug.
A semiconductor device trench isolation structure, comprising a substrate having a trench region lined with an oxynitride liner with at least 500 Å of the sidewall of said oxynitride liner immediately below the surface of said substrate having a nitrogen concentration greater than the nitrogen concentration of the sidewalls of said liner in the lower portion of said trench, and with said trench region lined therein with said oxynitride liner filled with an oxynitride fill material to form an oxynitride trench plug with the nitrogen concentration of said oxynitride fill material being greater at the top portion of said oxynitride trench plug than at the bottom portion of said oxynitride trench plug.
A semiconductor device trench isolation structure, comprising a substrate having a trench region lined with an oxynitride liner with at least 500 Å of the sidewall of said oxynitride liner immediately below the surface of said substrate having a nitrogen concentration greater than the nitrogen concentration of the sidewalls of said liner in the lower portion of said trench, and with said trench region lined therein with said oxynitride liner filled with an oxynitride fill material to form an oxynitride trench plug with the nitrogen concentration of said oxynitride fill material being greater within 50 Å0 of the top surface of said trench plug.
Dependencies are inferred from the claim text.