Forming method of resist pattern for improving accuracy of dimension of pattern, manufacturing method of semiconductor apparatus using the same and heat treatment apparatus for the same
AssigneeElpida Memory, Inc.
InventorHiroshi Yoshino
Life of this patent
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Abstract
A forming method of a resist pattern includes the following two steps. The first step is to carry out a heat treatment of a substrate, on which a resist pattern is formed, in a first heat treatment temperature in a first treatment period. The second step is to change said first heat treatment temperature to a second heat treatment temperature during said heat treatment such that a variation of dimensions of said resist pattern in said heat treatment reaches a desirable variation in a second treatment period.
Claims24
A forming method of a resist pattern, comprising:
- (a) carrying out a heat treatment of a substrate, on which a resist pattern is formed, in a first heat treatment temperature in a first treatment period;
- and
- (b) changing said first heat treatment temperature to a second heat treatment temperature during said heat treatment such that a variation of dimensions of said resist pattern in said heat treatment reaches a desirable variation in a second treatment period.
A computer program product embodied on a computer-readable medium and comprising code that, when executed, causes a computer to perform the following:
- (a) carrying out a heat treatment of a substrate, on which a resist pattern is formed, in a first heat treatment temperature in a first treatment period;
- and
- (b) changing said first heat treatment temperature to a second heat treatment temperature during said heat treatment such that a variation of dimensions of said resist pattern in said heat treatment reaches a desirable variation in a second treatment period.
A heat treatment apparatus comprising:
- a plurality of heat treatment sections each of which separately carries out a heat treatment of corresponding one of a plurality of areas in a substrate having a resist pattern;
- a plurality of temperature sensors each of which detects a temperature of corresponding one of said plurality of heat treatment sections;
- and
- a control section which controls each of said plurality of heat treatment sections based on corresponding one of each of detection results,
- wherein said control section calculates a variation of dimensions of said resist pattern in said heat treatment in a first heat treatment temperature in a first treatment period based on said first heat treatment temperature, and changes said first heat treatment temperature to a second heat treatment temperature such that said variation reaches a desirable variation in said each of a plurality of areas in a second treatment period, during said heat treatment.
A manufacturing method of a semiconductor apparatus, comprising:
- (c) forming a resist pattern on a substrate on which a film is formed;
- (d) carrying out a heat treatment of said substrate in a first heat treatment temperature in a first treatment period;
- (e) changing said first heat treatment temperature to a second heat treatment temperature during said heat treatment such that a variation of dimensions of said resist pattern in said heat treatment reaches a desirable variation in a second treatment period;
- (f) etching said film on said substrate;
- and
- (g) removing said resist pattern from said substrate.
Dependencies are inferred from the claim text.