Method for semiconductor wafer etching
AssigneeASM Japan K.K.
InventorsAkira Shimizu, Kunitoshi Nanba
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Abstract
A batch-type etching method includes applying microwaves from the outside of a reaction chamber to semiconductor wafers after HF gas etching of the wafers to remove residual substances including H2O, CH3OH, CH3COOH and/or other by-products from surfaces of the wafers. Microwaves oscillate polar molecules of the substances and generate heat, thereby removing the substances.
Claims17
A method for etching semiconductor wafers using a batch-type etching device comprising a reaction chamber, an exhaust port, a wafer supporting boat, a microwave generator, and an inlet port, said method comprising:
- evacuating said reaction chamber using said exhaust port,
- introducing an etching gas using said inlet port until a pressure is attained,
- etching said semiconductor wafers,
- evacuating said reaction chamber after the etching of said semiconductor wafers, and
- removing residual substances from surfaces of said wafers by heating with microwaves from the microwave generator said wafers by oscillation of polar molecules of the residual substances.
A method for etching semiconductor wafers using a batch-type etching device comprising a reaction chamber, an exhaust port, a wafer supporting boat, a microwave generator, and an inlet port, said method comprising:
- evacuating said reaction chamber using said exhaust port,
- introducing an etching gas using said inlet port until a pressure is attained,
- etching said semiconductor wafers for a first time period,
- evacuating said reaction chamber after said first time period;
- applying microwaves from an outside of said reaction chamber to said semiconductor wafers for a second time period using said microwave generator;
- and
- purging said reaction chamber with N2 gas.
A method for etching semiconductor wafers using a batch-type etching device comprising:
- providing a reaction chamber, an exhaust port, a wafer supporting boat, a microwave generator, and an inlet port,
- evacuating said reaction chamber using said exhaust port,
- introducing a reaction gas using said inlet port until a pressure is attained,
- etching said semiconductor wafers for a first time period,
- evacuating said reaction chamber after said first time period, and
- applying microwaves to said semiconductor wafers for a second time period using said microwave generator.
Dependencies are inferred from the claim text.