Method of forming minimally spaced word lines
AssigneeMicron Technology, Inc.
InventorWerner Juengling
Life of this patent
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Abstract
A method of forming minimally spaced word lines is disclosed. A double exposure technique is employed at the gate formation level. A small trench is defined through gate stack layers by using a tapered etch or spacers to achieve the desired width of the trench. A filler material fills the trench and forms a filler plug. The gate layers adjacent to the trench are then patterned and etched and the filler plug is removed to obtain gate stacks spaced apart by a distance of less than about 400 Angstroms.
Claims74
A method of forming a semiconductor structure, said method comprising the steps of:
- forming at least one isolation region within said semiconductor substrate;
- and
- forming a plurality of gate stacks over said semiconductor substrate, at least two of said plurality of gate stacks being in contact with said isolation region and being spaced apart from each other by less than 400 Angstroms.
A method of forming a plurality of gate stacks over a substrate, said method comprising forming at least two adjacent gate stacks over said substrate, said adjacent gate stacks being spaced apart from each other by less than 400 Angstroms.
A method of forming gate stacks over a substrate, said method comprising forming at least two adjacent gate stacks over an isolation region of said substrate, said adjacent gate stacks being spaced apart from each other by less than 400 Angstroms.
A memory structure comprising:
- a plurality of word lines formed over a semiconductor substrate, at least two adjacent ones of said plurality of word lines being spaced apart from each other by a distance of less than 400 Angstroms.
A memory device comprising a plurality of DRAM cells, said DRAM cells including a plurality of word lines formed over a semiconductor substrate, at least two of said plurality of word lines being spaced apart from each other by a distance less than about 400 Angstroms, and a plurality of bit lines formed over said plurality of word lines.
Dependencies are inferred from the claim text.