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US 2004/0104482 A1Published application
Semiconductor integrated circuit device having multilevel interconnection
AssigneeKabushiki Kaisha Toshiba
InventorsKoji Miyamoto, Kenji Yoshida, Hisashi Kaneko
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Abstract
One via contact through which upper and lower interconnections of a multilevel interconnection are connected to each other is provided when the width or volume of the lower interconnection is not larger than a given value. A plurality of via contacts are arranged at regular intervals, each of which is not larger than a given value, in an effective diffusion region of voids included in the lower interconnection, when the width or volume of the lower interconnection exceeds a given value.
Claims12
A semiconductor integrated circuit device comprising:
- a first interconnection which is made of materials containing copper as a principal ingredient and has a given width, length, thickness and volume;
- a second interconnection which is made of materials containing copper as a principal ingredient and provided above said first interconnection;
- and
- at least one via contact which is made of materials containing copper as a principal ingredient and through which said first interconnection and said second interconnection are electrically connected to each other, said at least one via contact including one via contact which is provided when one of the width and the volume of said first interconnection is not larger than a given value and a plurality of via contacts, which are arranged at regular intervals, each of which is not larger than a given value, in a predetermined region of said first interconnection, when one of the width and the volume of said first interconnection exceeds a given value.
1 more element
Dependencies are inferred from the claim text.