Semiconductor device with improved radiation property
AssigneeMitsubishi Denki Kabushiki
InventorYasuo Yamaguchi
Life of this patent
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Abstract
To improve the radiation property without inhibiting miniaturization of the device, heat generated at a heat generating layer (5) is radiated to a substrate (1) via plugs (7, 17), wiring layers (8, 18), and plugs (9, 19). A cross sectional along the principal plane of the substrate (1) of the plugs (7, 9, 17, 19) is set to be a rectangle, and the long sides of the rectangle are parallel to the direction perpendicular to the direction connecting one end and the other end of the heat generating layer (5). Between the plugs (9, 19) and the semiconductor layer (2) is interposed n-type semiconductor layers (3, 13).
Claims20
A semiconductor device comprising:
- a substrate having a principal plane;
- an insulation layer formed on said principal plane;
- a heat generating layer embedded in said insulation layer and opposing to said principal plane with a part of said insulation layer interposed therebetween;
- a first wiring layer disposed on said insulation layer;
- a second wiring layer disposed on said insulation layer;
- a first plug embedded in said insulation layer, of which lower end is connected to one end of said heat generating layer and upper end is connected to said first wiring layer, having a cross sectional shape along said principal plane of a rectangle of which short sides are parallel to a main direction connecting said one end and the other end of said heat generating layer and long sides are parallel to a direction perpendicular to said main direction;
- a second plug embedded in said insulation layer, of which lower end is connected to said other end of said heat generating layer and upper end is connected to said second wiring layer;
- and
- a third plug embedded in said insulation layer, of which upper end is connected to said first wiring layer or said first plug and lower end reaches said principal plane.
A semiconductor device comprising:
- a substrate having a principal plane;
- an insulation layer formed on said principal plane and made of a low dielectric constant insulator;
- a heat generating layer embedded in said insulation layer and opposing to said principal plane with a part of said insulation layer interposed therebetween;
- a first wiring layer disposed on said insulation layer;
- a second wiring layer disposed on said insulation layer;
- a first plug embedded in said insulation layer, of which lower end is connected to one end of said heat generating layer and upper end is connected to said first wiring layer;
- a second plug embedded in said insulation layer, of which lower end is connected to other end of said heat generating layer and upper end is connected to said second wiring layer;
- and
- a third plug embedded in said insulation layer, of which upper end is connected to said first wiring layer or said first plug and lower end reaches said principal plane.
A semiconductor device comprising:
- a semiconductor substrate having a principal plane;
- an insulation layer formed on said principal plane;
- a heat generating layer embedded in said insulation layer and opposing to said principal plane with a part of said insulation layer interposed therebetween;
- a first wiring layer disposed on said insulation layer;
- a second wiring layer disposed on said insulation layer;
- a first plug embedded in said insulation layer, of which lower end is connected to one end of said heat generating layer and upper end is connected to said first wiring layer;
- a second plug embedded in said insulation layer, of which lower end is connected to other end of said heat generating layer and upper end is connected to said second wiring layer;
- and
- a third plug embedded in said insulation layer, of which upper end is connected to said first wiring layer or said first plug and lower end reaches said principal plane, the third plug forming a Schottky barrier between the third plug and said semiconductor substrate.
Dependencies are inferred from the claim text.