Integrated circuit with a strongly-conductive buried layer
OwnerMichel Marty, Philippe Coronel +1inventors
InventorsMichel Marty, Philippe Coronel, Francois Leverd
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Abstract
An integrated circuit including a buried layer of determined conductivity type in a plane substantially parallel to the plane of a main circuit surface, in which the median portion of this buried layer is filled with a metal-type material.
Claims8
An integrated circuit comprising a buried layer of determined conductivity type in a plane substantially parallel to the plane of a main circuit surface, wherein a median portion of said buried layer is filled with a metal-type material.
A method for forming a buried layer in a semiconductor substrate of an integrated circuit, comprising the steps of:
- providing, at the location where the buried layer is to be formed, a layer portion made of a material selectively etchable with respect to the rest of the semiconductor material,
- doping the semiconductor substrate according to a chosen conductivity type on either side of said layer portion,
- digging an opening extending from the integrated circuit surface to said layer portion,
- removing said layer portion by isotropic etch, and
- filling the cavity thus formed with a metal-type material.
Dependencies are inferred from the claim text.