Semiconductor device having T-shaped gate electrode and method of manufacturing the same

A method of manufacturing a semiconductor device, the method comprising:

• forming an insulating layer pattern on a semiconductor substrate, the insulating layer pattern being formed of a composite layer of a first insulating layer and a silica aerogel layer and defining a first opening through which a first portion of the semiconductor substrate is exposed;
• forming source and drain electrodes on the semiconductor substrate exposed through the first opening;
• forming a second insulating layer for covering the source and drain electrodes and the insulating layer pattern;
• patterning the second insulating layer and the insulating layer pattern to form a second opening through which a second portion of the semiconductor substrate is exposed, between the source and drain electrodes;
• and
• forming a T-shaped gate electrode on the semiconductor substrate exposed through the second opening.

A method of manufacturing a semiconductor device, the method comprising:

• forming source and drain electrodes on a semiconductor substrate;
• forming a first insulating layer for covering the source and drain electrodes and a top surface of the semiconductor substrate;
• forming a silica aerogel layer on the first insulating layer;
• patterning the silica aerogel layer and the first insulating layer to expose a first portion of the semiconductor substrate;
• and
• forming a T-shaped gate electrode on the first exposed portion.