Method and apparatus of terminating a high voltage solid state device
AssigneeKoninklijke Phillips Electronics N.V.
InventorsTed Letavic, Mark Simpson
Life of this patent
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Abstract
Termination of a high voltage device is achieved by a plurality of discrete deposits of charge that are deposited in varying volumes and/or spacing laterally along a termination region. The manner in which the volumes and/or spacing varies also varies between different layers of a multiple layer device. In a preferred embodiment, the variations are such that the field strength is substantially constant along any horizontal or vertical cross section of the termination region.
Claims16
A solid state device including a plurality of layers, each layer including an active region and a termination region, at least two layers including termination regions that comprise a varying charge profile extending from the active region, laterally through the termination region towards the edge of said termination region.
A solid state device having plural epitaxial layers, each epitaxial layer including a termination region, the termination region being doped with a plurality of p- dots of charge which vary along the termination region in their volume or spacing, the volume and spacing of said charge dots being different on at least two different layers of said device.
A method of constructing a solid state device comprising the steps of:
- forming a first layer including an active region and a termination region using a first mask;
- and
- forming at least a second layer including an active region and a termination region using a second mask, the first and second masks being different for the portions corresponding to the termination region.
A method of forming termination region for a solid state device, the termination region having a width and a depth, the method comprising the steps of:
- (a) doping the termination in varying charge concentrations along the width;
- and
- (b) doping the termination in varying charge concentrations along the depth.
Dependencies are inferred from the claim text.