Nitride semiconductor device comprising bonded substrate and fabrication method of the same

A fabrication method of a nitride semiconductor device comprising:

• growing an under layer including a nitride semiconductor having a characteristic to absorb the light emitted by said device on one main face of a substrate for growing that has two mutually opposed main faces;
• forming at least one or more n-type nitride semiconductor layers, an active layer having a quantum well structure including at least a well layer of AlaInbGa1-a-bN, (0≦a≦1, 0≦b≦1, a+b≦1) and a barrier layer of AlcIndGa1-c-dN, (0≦c≦1, 0≦d≦1, c+d≦1), and one or more p-type nitride semiconductor layers on said under layer;
• bonding a supporting substrate to the surface of said p-type nitride semiconductor layers;
• and
• removing said substrate for growing and said under layer.

A nitride semiconductor device comprising:

• a substrate having two opposed main faces and having a thermal expansion coefficient higher than that of a nitride semiconductor;
• a bonding layer placed on one main face of said substrate and including an eutectic layer;
• one or more p-type nitride semiconductor layers placed on said bonding layer;
• an active layer including at least a well layer of AlaInbGa1-a-bN, (0<a≦1, 0<b≦1, a+b<1) and a barrier layer of AlcIndGa1-c-dN, (0<c≦1, 0≦d≦1, c+d<1) and placed on said p-type nitride semiconductor layers;
• and
• one or more n-type nitride semiconductor layers containing Al and placed on said the active layer.

A nitride semiconductor device comprising:

• a substrate having two opposed main faces;
• a bonding layer placed on one main face of said substrate and including an eutectic layer;
• one or more p-type nitride semiconductor layers placed on said bonding layer;
• an active layer including at least a well layer of AlaInbGa1-a-bN, (0<a≦1, 0<b≦1, a+b<1) and a barrier layer of AlcIndGa1-c-dN, (0<c≦1, 0≦d≦1, c+d<1) and placed on said p-type nitride semiconductor layers;
• and
• n-type nitride semiconductor layers placed on said active layer and made of a nitride semiconductor which does not substantially absorb the light emitted from said active layer.