Semiconductor laser with a lattice structure
OwnerAlfred Forchel, Martin Kampinventors
Life of this patent
Estimating the term…
Abstract
A semiconductor laser (22) with a semiconductor substrate (11), a laser layer (13) arranged on the semiconductor substrate, a waveguide ridge (15) arranged at a distance from the laser layer, and a strip-shaped lattice structure (23) arranged in parallel to the laser layer is disclosed. The lattice structure (23) includes two structural regions (24, 25) which are arranged on both sides of the waveguide ridge (15) and are formed at a distance from the laser layer (13) above the laser layer (13). A process for the production of such a semiconductor laser is also disclosed.
Claims4
A process for said production of a semiconductor laser based on a semiconductor substrate with a laser layer arranged on said semiconductor substrate and a strip-shaped lattice structure, the process comprising the steps of:
- producing a complete semiconductor laser structure in an epitaxial process;
- forming a waveguide ridge by subjecting said semiconductor laser structure to a material removal process to form carrier surfaces arranged on both sides of a waveguide ridge;
- and
- applying the lattice structure to said carrier surfaces.
Dependencies are inferred from the claim text.