Methods for etching photolithographic reticles

A method for etching a reticle comprising an attenuating material layer disposed on an optically transparent material, a patterned metal photomask layer formed on attenuating material layer, and a patterned resist material deposited on the patterned metal photomask layer, the method comprising:

• placing the reticle in a processing chamber on a support member, wherein the reticle is maintained at a temperature of less than about 150° C.;
• introducing a processing gas comprising one or more fluorine containing hydrocarbons have the formula CXHYFZ, where x is an integer from 1 to 5, y is an integer from 1 to 8, and z is an integer from 1 to 8 and chlorine gas;
• delivering power to the processing chamber to generate a plasma;
• and
• etching exposed portions of the attenuating material layer.

A method for fabricating a reticle for a photolithographic processing, comprising:

• patterning a metal layer disposed on an attenuating material layer to expose the attenuating material layer;
• depositing and patterning a resist layer over the patterned metal layer to expose the attenuating material layer;
• placing the photomask on a support member in an etch processing chamber;
• introducing a processing gas comprising one or more fluorine containing polymerizing materials and one or more chlorine-containing gases into the processing chamber;
• applying a source of RF power to a coil disposed adjacent the etch processing chamber to generate a plasma in the processing chamber;
• and
• etching exposed portions of the attenuating material layer.