Back to results
US 2004/0071879 A1Published application
Method of film deposition, and fabrication of structures
AssigneeInternational Business Machines Corporation
InventorsAlessandro C. Callegari, Deborah Ann Neumayer
Life of this patent
Estimating the term…
Abstract
A method of fabricating aluminum oxide films utilizing aluminum alkoxide precursors is described. The aluminum oxide film is formed by (a) providing an aluminum alkoxide precursor that is dissolved, emulsified or suspended in a liquid; (b) providing a vapor generated from the aluminum alkoxide precursor; and (c) depositing an aluminum oxide film on the substrate at a temperature greater than 500° C.
Claims38
A method for chemical vapor deposition or atomic layer deposition of aluminum oxide comprising:
- (a) providing an aluminum alkoxide precursor that is dissolved, emulsified or suspended in a liquid;
- (b) providing a vapor generated from the aluminum alkoxide precursor;
- and
- (c) depositing an aluminum oxide film from said vaporized precursor on a substrate at a temperature greater than 500° C.
1 more element
Dependencies are inferred from the claim text.