Method for forming nanocrystalline diamond films for cold electron emission using hot filament reactor
OwnerAlexandr Tursunovich Rakhimov, Vladimir Anatolievich Samorodov +2inventors
InventorsAlexandr Tursunovich Rakhimov, Vladimir Anatolievich Samorodov, Nikolai Vladimir Suetin, Valentin Vladimirovich Pochinkin
Life of this patent
Estimating the term…
Abstract
A method is provided for growing diamond films on substrates for formation of cold cathodes having high electron emission at a low electric field. High and uniform electron emission properties are obtained by growing the film in a hot filament reactor and in proximity to the surface of a heated grid made of graphite or other selected materials. The grid temperature is in the range of about 800° C. to about 2000° C. Mixtures of hydrogen and carbon-containing gases are used to forms the diamond.
Claims16
A method for depositing a diamond film for cold electron emission on a substrate in a reactor, comprising:
- positioning the substrate in the reactor;
- positioning a filament in the reactor at a selected distance from the substrate;
- positioning a grid at a selected distance from the substrate, the grid being disposed between the substrate and the filament;
- evacuating the reactor and introducing hydrogen gas into the reactor it a selected pressure;
- heating the substrate and the filament such as to raise the temperature of the substrate to the range from about 600° C. to about 1000° C. and the filament to a temperature in the range from about 1800° C. to about 2800° C. and the temperature of the grid is increased to above about 600° C.;
- introducing a mixture of hydrogen and a carbon-containing gas into the reactor at a selected pressure;
- and
- growing a film on the substrate to a selected thickness.
A method for depositing a diamond film for cold electron emission on a substrate in a reactor, comprising:
- positioning the substrate in the reactor and heating the substrate to a temperature in the range from about 600° C. to about 1000° C.;
- positioning a grid at a selected distance from the substrate;
- heating the grid to a temperature in the range from about 600° C. to about 2000° C.;
- evacuating the reactor and introducing hydrogen gas into the reactor at a selected pressure;
- introducing a mixture of hydrogen and a carbon-containing gas into the reactor at a selected pressure;
- and
- growing a film on the substrate to a selected thickness.
Dependencies are inferred from the claim text.