Semiconductor memory cell and method for producing the same

Abstract

The present invention provides a semiconductor memory cell having a semiconductor substrate (1); a trench (5) provided in the semiconductor substrate (1); a floating gate electrode (45) introduced in the trench (5), which electrode is insulated from the trench walls by a first insulation layer (50); a control gate electrode (80) provided in the semiconductor substrate (1) around the trench (5); a second insulation layer (10) provided on the surface of the semiconductor substrate (1); a conductive layer (20) provided on the second insulation layer (10), which conductive layer forms a channel region (35) above the floating gate electrode (45); and a source region (30) and drain region (40) formed in the conductive layer (20) in each case beside the channel region (35). The invention also provides a corresponding fabrication method.

Dependencies are inferred from the claim text.