Thin-film magnetic memory device suppressing parasitic capacitance applied to data line or the like

A thin-film magnetic memory device comprising:

• a plurality of memory cells arranged in rows and columns for magnetically storing data;
• a plurality of first bit lines, provided corresponding to memory cell columns respectively, divided into a plurality of first groups each including at least Y (Y:
• integer of at least two) first bit lines;
• at least one of Y read data lines supplied with a current in a state electrically connected with a selected memory cell among said plurality of memory cells selected as a subject for data read coupled with a first voltage in data reading;
• Y read circuits, provided corresponding to said Y read data lines respectively, each electrically coupling corresponding the read data line with a second voltage and generating read data on the basis of a current passing through said corresponding read data line in said data reading;
• a plurality of column selection lines provided corresponding to said plurality of first groups respectively;
• and
• a plurality of connection control parts, provided corresponding to said plurality of first groups respectively, each electrically coupling corresponding Y first bit lines and said Y read data lines respectively in corresponding the first group among said plurality of first groups in response to activation of corresponding the column selection line.