Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsGaku Minamihaba, Dai Fukushima, Yoshikuni Tateyama, Hiroyuki Yano
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Abstract
A semiconductor device comprises a semiconductor substrate, an interlayer insulating film including a first insulating film formed above the substrate and having a relative dielectric constant smaller than 2.5 and a second insulating film formed to cover the first insulating film and having a relative dielectric constant larger than that of the first insulating film, and a buried wiring formed within the interlayer insulating film. A bottom portion of the second insulating film is buried in the first insulating film at a number of points.
Claims20
A semiconductor device, comprising:
- an interlayer insulating film including a first insulating film formed above a semiconductor substrate and having a relative dielectric constant smaller than 2.5 and a second insulating film formed to cover the first insulating film and having a relative dielectric constant larger than that of the first insulating film;
- and
- a buried wiring formed in the interlayer insulating film,
- wherein a bottom portion of the second insulating film is buried in a number of points in the first insulating film.
A method of manufacturing a semiconductor device, comprising:
- forming a first insulating film having a relative dielectric constant smaller than 2.5 above a semiconductor substrate;
- forming a number of concavities in the first insulating film;
- forming a second insulating film having a relative dielectric constant larger than that of the first insulating film on the first insulating film so as to form a laminate structure film such that a bottom portion of the second insulating film is buried in a number of concavities formed in the first insulating film;
- forming a trench for burying a wiring in the laminate structure film;
- forming a conductive material layer on the laminate structure film including the trench;
- and
- applying a chemical mechanical polishing treatment to the conductive material layer such that the conductive material is left unremoved within the trench to form a buried wiring.
Dependencies are inferred from the claim text.