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US 2004/0070031 A1Published application
Soi mosfet device having second gate electrodes for threshold voltage control
AssigneeOki Electric Industry Co., Ltd.
InventorShunsuke Baba
Life of this patent
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Abstract
In order to apply a predetermined voltage to a silicon layer (3) to thereby control a threshold voltage, a second gate electrode (5) is provided on the surface of the silicon layer (3) with a gate oxide film (insulating layer) (4) interposed therebetween so as to fall within the same surface of the silicon layer (3) as a surface on which a source (7) and a drain (8) placed in the silicon layer (3) and a first gate electrode (6) are disposed.
Claims5
An SOI-structured MOSFET, comprising:
- a first gate electrode for a signal input;
- and
- a second gate electrode for threshold voltage control, said second gate electrode being provided on a surface of a silicon layer with an insulating layer interposed between the first gate electrode and the silicon layer to apply a predetermined voltage to the silicon layer to thereby control a threshold voltage, in such a manner so as to be placed on the same surface of the silicon layer as a surface on which the first gate electrode is disposed.
Dependencies are inferred from the claim text.