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US 2004/0070028 A1Published application
Method of forming a low resistance semiconductor device and structure therefor
AssigneeSemiconductor Components Industries, LLC
InventorsMisbahul Azam, Jeffrey Pearse, Daniel G. Hannoun
Life of this patent
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Abstract
A transistor (10) is formed with a low resistance trench structure that is utilized for a gate (17) of the transistor. The low resistance trench structure facilitates forming a shallow source region (49) that reduces the gate-to-source capacitance.
Claims20
A method of forming a semiconductor device having a low resistance trench element comprising:
- providing a semiconductor substrate of a first conductivity type, the semiconductor substrate having a surface;
- forming an opening extending a first distance from the surface into the semiconductor substrate;
- forming an insulator on sidewalls of the opening;
- and
- forming a gate material filling the opening and extending a second distance out of the opening past the surface.
2 more elements
A method of forming an MOS transistor comprising:
- providing a semiconductor substrate of a first conductivity type having a surface;
- forming an opening extending into the semiconductor substrate;
- forming an alignment pin in the opening and extending a distance out of the opening past the surface;
- forming a first mask on sidewalls of the alignment pin and on at least a first portion of the surface around the alignment pin and not on a second portion of the surface;
- forming spacers on the first mask;
- using the spacers as a second mask while doping the semiconductor substrate underlying the second portion of the surface;
- oxidizing the second portion of the surface to form a thick oxide;
- removing the spacers and the first mask;
- and
- using the thick oxide as a mask while doping the semiconductor substrate underlying the first portion of the surface.
7 more elements
A semiconductor device comprising:
- a semiconductor substrate having a surface and an opening extending from the surface into the opening;
- an insulator lining the opening;
- a gate material in the opening and extending a first distance out past the surface;
- and
- a source region on the surface adjacent to the insulator and extending a second distance into the semiconductor substrate, the source region abutting the insulator.
2 more elements
Dependencies are inferred from the claim text.