Semiconductor device and method of manufacturing the same
AssigneeHynix Semiconductor Inc.
InventorsNam Sik Kim, Joo Han Shin
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Abstract
The present invention relates to a semiconductor device and a method of manufacturing the same. The minimum marginal width of an impurity diffusion layer is defined to reduce by a given width. The reduced width of the impurity diffusion layer is compensated for through a silicon growth layer formed on the top of a device isolation film having a relatively higher degree of freedom than the bottom of the device isolation film. Thus, the degree of integration in the semiconductor device can be improved while keeping intact the minimum marginal width of the impurity diffusion layer.
Claims19
A semiconductor device, comprising:
- a semiconductor substrate;
- a gate formed on the semiconductor substrate;
- an impurity diffusion layer formed in the semiconductor subset at both sides of the gate, wherein the impurity diffusion layer serves as source and drain;
- a device isolation film of a trench structure for electrically isolating neighboring impurity diffusion layers, wherein the device isolation film has at least one insulating film;
- and
- a silicon growth layer formed between the device isolation film and the semiconductor substrate at an upper portion of the device isolation film,
- wherein the same impurity as the impurity diffusion layer is injected into the silicon growth layer so that the impurity diffusion layer has a structure extended by the silicon growth layer.
A method of manufacturing a semiconductor device, comprising the steps of:
- (a) forming a trench in a semiconductor substrate;
- (b) forming a first insulating film so that the trench is buried by a given depth;
- (c) performing a SEG process for the semiconductor substrate exposed at both sidewalls of the trench to form a silicon growth layer;
- and
- (d) forming a second insulating film on the first insulating film so that the trench is buried.
A method of manufacturing a semiconductor device, comprising the steps of:
- (a) forming a pad nitride film in semiconductor substrate;
- (b) etching portions of the pad nitride film and the semiconductor substrate to form a trench;
- (c) depositing an insulating film on the entire structure so that the trench is buried;
- (d) polishing the insulating film so that the pad nitride film is exposed;
- (e) removing the pad nitride film by performing an etch process using an etch rate of the pad nitride film and the insulating film;
- (f) performing a cleaning process for the insulating film to form a moat of a given depth between the nitride film and the semiconductor substrate;
- and
- (g) performing a SEG process for the semiconductor substrate exposed at the moat, thus forming a silicon growth layer.
Dependencies are inferred from the claim text.