High-efficiency light emitting diode and method for manufacturing the same

Abstract

Provided is a light emitting diode and a method of fabricating the light emitting diode. The light emitting diode includes a substrate, an n-type compound semiconductor layer which is formed on the substrate, an active layer which is formed on the n-type compound semiconductor layer, a p-type compound semiconductor layer which is formed on the active layer, an n-type electrode which contacts the n-type compound semiconductor layer, and a p-type electrode which contacts the p-type compound semiconductor layer. Here, a surface of the active layer from which the light is emitted is a continuous curved surface. Thus, the light emission rate of the active layer can be much higher than an active layer in the conventional light emitting diode. As a result, the light which is estimated to be emitted from the light emitting diode increases, and the light is uniformly emitted in all directions. In addition, the method of the present invention is advantageous in that it is not necessary to add a separate process for forming the wave shape of the active layer.

Dependencies are inferred from the claim text.