Fabrication method of semiconductor device

A fabrication method of a semiconductor device, comprising:

• a step of forming a connection hole in an interlayer insulating film including an organic insulating film;
• a step of forming an inorganic film covering on an upper surface of the interlayer insulating film and an inner surface of the connection hole;
• a step of forming an organic film embedding at least a bottom of the connection hole via the inorganic film on the interlayer insulating film;
• a step of removing the organic film in the connection hole so as to leave the organic film on a bottom of the connection hole;
• a step of forming a wiring trench connecting to the connection hole in the interlayer insulating film;
• a step of removing the organic film inside the connection hole;
• a step of removing the inorganic film;
• and
• a step of forming a trench wiring by filling a conductive material in the wiring trench and inside the connection hole and forming a plug continuing from the trench wiring.