Method of forming a controlled and uniform lightly phosphorous doped silicon film

A method of forming a lightly phosphorous doped silicon film comprising:

• placing a substrate in a single-wafer deposition chamber;
• introducing a phosphorous source gas and a disilane gas into said single-wafer deposition chamber, said wherein said phosphorous source gas and said disilane gas have a first flow ratio less than 1:100;
• and
• thermally decomposing said disilane gas and said phosphorous source gas at a pressure ranging from about 30 Torr to 350 Torr to form said lightly phosphorous doped silicon film which has a phosphorous doping concentration less than 1×1020 atoms/cm3.

A method of forming a semiconductor device comprising:

• placing a substrate in a single-wafer deposition chamber;
• maintaining a process temperature between 500° C. and 650° C. and a process pressure between 30 and 350 Torr;
• introducing a phosphorous source gas and a disilane gas into said single-wafer deposition chamber, said phosphorous source gas and said disilane source gas have a flow ratio less than 1:100;
• thermally decomposing said disilane gas and said phosphorous source gas in said single-wafer deposition chamber using a thermal energy source to form a lightly phosphorous doped silicon film above said substrate, said lightly phosphorous doped silicon film has a phosphorous doping concentration less than 1×1020 atoms/cm3;
• cutting off said phosphorous source gas while introducing an oxidation source gas into said single-wafer deposition chamber;
• and
• thermally decomposing said disilane gas and said oxidation source gas using said thermal energy source to form a silicon oxide film above said lightly phosphorous doped silicon film.

A substrate processing system including:

• a susceptor, located within a single-wafer deposition chamber, said susceptor to hold a substrate during a substrate processing;
• a gas supply apparatus for introducing a reactant gas mixture into said single-wafer deposition chamber to deposit lightly phosphorous doped silicon film over said substrate, said reactant gas mixture comprising a disilane gas and a phosphorous source gas;
• a controller for controlling said gas supply apparatus;
• and
• a memory device coupling to said controller, said memory device comprising a computer-readable medium having a computer readable program embodied therein for directing operation of said substrate processing system, said computer-readable program including instructions for controlling said gas supply apparatus to introduce said reactant gas mixture, for maintaining a process temperature between 500° C. and 650° C., for maintaining a process pressure between 30 Torr and 350 Torr, and for controlling a flow ratio for said reactant gas mixture.