US 2004/0063293 A1 · Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics

Abstract

A method of fabricating a SiGe heterojunction bipolar transistor (HBT) is provided which results in a SiGe HBT that has a controllable current gain and improved breakdown voltage. The SiGe HBT having these characteristics is fabricated by forming an in-situ P-doped emitter layer atop a patterned SiGe base structure. The in-situ P-doped emitter layer is a bilayer of in-situ P-doped a:Si and in-situ P-doped polysilicon. The SiGe HBT structure including the above mentioned bilayer emitter is also described herein.

Claims20

Dependent claims

A SiGe heterojunction bipolar transistor structure comprising:

a patterned SiGe base structure which includes at least a SiGe layer present atop a substrate and a patterned insulator present on a portion of said SiGe layer having an opening that exposes a portion of said SiGe layer;
and
an emitter layer formed atop said SiGe base structure including in said opening, said emitter layer is a bilayer of in-situ P-doped a:Si and in-situ P-doped polysilicon.

Dependencies are inferred from the claim text.

Facts

Application

10/676,171Filed 1 Oct 2003

Priority

15 Jan 2002

Published

1 Apr 2004

Term ends

Not estimatedThe source records don’t support an estimate.

Classification3 codes

H10D 10/021
Manufacture or treatment: of heterojunction BJTs [HBT]
H10D 10/891
Vertical heterojunction BJTs: comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors
H10D
Inorganic electric semiconductor devices

Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics

Life of this patent

Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics

Life of this patent

Abstract

Claims20