Semiconductor die package including drain clip

A semiconductor die package comprising:

• (a) a semiconductor die comprising a first surface, a second surface, and a vertical power MOSFET having a gate region and a source region at the first surface, and a drain region at the second surface;
• (b) a drain clip having a major surface and being electrically coupled to the drain region;
• (c) a drain lead electrically coupled to an end of the drain clip;
• (d) a gate lead electrically coupled to the gate region;
• (e) a source lead structure including at least one source lead and a protruding region having a major surface, and a die attach surface opposite the major surface of the source lead structure, the die attach surface being electrically coupled to the source region;
• and
• (f) a non-conductive molding material encapsulating the semiconductor die, wherein the major surface of the drain clip is exposed through the non-conductive molding material.

A method for making a semiconductor die package, the method comprising:

• (a) providing a semiconductor die comprising a first surface, a second surface, and a vertical power MOSFET having a gate region and a source region at the first surface, and a drain region at the second surface;
• (b) attaching a source lead structure to the source region and a gate lead to the gate region;
• (c) attaching a drain clip having a major surface to the drain region;
• (d) molding a molding material around the semiconductor die, whereby the major surface is exposed through the molding material.