GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same

A method for fabricating a light-emitting device, the method comprising:

• (a) sequentially forming a first compound semiconductor layer, an active layer, and a second compound semiconductor layer, which are for inducing light emission, on a high-resistant substrate;
• (b) forming a light-reflecting conductive layer on the second compound semiconductor layer;
• (c) etching a region of the high-resistant substrate to expose the first compound semiconductor layer;
• and
• (d) forming a light-transmitting conductive layer to cover the exposed region of the first compound semiconductor layer.

A method for fabricating a light-emitting device, the method comprising:

• (a) forming a material layer for lasing on a high-resistant substrate;
• (b) forming a first electrode on the material layer;
• (c) etching a region of the high-resistant substrate to expose a region of the material layer;
• and
• (d) forming a second electrode on the bottom of the high-resistant substrate to cover partially or fully the exposed region of the material layer.