Digit line architecture for dynamic memory
AssigneeMicron Technology, Inc.
InventorBrent Keeth
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Abstract
A novel bi-level DRAM architecture is described which achieves significant reductions in die size while maintaining the noise performance of traditional folded architectures. Die size reduction results primarily by building the memory arrays with 6F2 or smaller memory cells in a type of cross point memory cell layout. The memory arrays utilize stacked digitlines and vertical digitline twisting to achieve folded architecture operation and noise performance.
Claims2
A method for improved differential electrical noise reduction method for an integrated circuit device having a memory having multiple vertical levels of circuitry, said memory having a plurality of at least four arrays of a plurality of memory cells, each array of memory cells being substantially equally spaced from an adjacent array of memory cells, each array of memory cells including a plurality of memory cells and at least four pairs of digitlines, each pair of digitlines including a first digitline and a second digitline, the first digitline and the second digitline being substantially vertically aligned in an upper conductive level and a lower conductive level of the integrated circuit device, the first digitline and second digitline of each pair of digitlines each connected to an equal number of the memory cells in each array of the plurality of memory cells, the method comprising:
- electrically balancing the first digitline and the second digitline of each digitline pair of the at least four pairs of digitlines to balance the electrical noise therebetween by twisting the first digitline and the second digitline of a pair of digitlines of the at least four pairs of digitlines between arrays of the plurality of at least four arrays of memory cells in a twist region located between each array of the plurality of at least four arrays of memory cells, a first pair and a third pair of digitlines of the at least four pairs of digitlines twisted in the twist region located between a first array of memory cells and a second array of memory cells and twisted in the twist region located between a third array of memory cells and a fourth array of memory cells while a second pair of digitlines and a fourth pair of digitlines of the at least four pairs of digitlines are twisted in the twist region located between the second array of memory cells and the third array of memory cells, the electrically balancing including connecting an equal number of memory cells to a portion of one of the first digitline and the second digitline of a pair of digitlines of the at least four pairs of digitlines when located in a lower conductive level of an array of the plurality of at least four arrays of memory cells.
Dependencies are inferred from the claim text.