Process and mask projection system for laser crystallization processing of semiconductor film regions on a substrate

A process for processing a silicon thin film on a sample, comprising the steps of:

• (a) controlling an irradiation beam generator arrangement to provide first and second sets of irradiation beam pulses at a predetermined repetition rate;
• (b) forwarding the first set of beam pulses to irradiate and pass at least a portion thereof through a mask to produce a plurality of beamlets;
• and
• (c) providing the second set of beam pulses and the beamlets to impinge and irradiate at least one section of the silicon thin film, wherein, when the second set of beam pulses and the beamlets simultaneously irradiate the at least one section of the silicon thin film, the second set of beam pulses and the beamlets provide a combined intensity which is sufficient to melt the at least one irradiated section of the silicon thin film throughout an entire thickness of the section.

A system for processing a silicon thin film on a sample, comprising:

• a memory storing a computer program;
• and
• a processing arrangement executing the computer program to perform the following steps:
• (a) controlling an irradiation beam generator to emit irradiation beam pulses at a predetermined repetition rate,
• (b) causing the irradiation beam pulses to be separated into a first set of separated beam pulses and a second set of separated beam pulses,
• (c) forwarding the first set of separated beam pulses to irradiate and pass at least portions thereof through a mask to produce a plurality of beamlets, and
• (d) causing the second set of separated beam pulses and the beamlets to impinge and irradiate at least one section of the silicon thin film,
• wherein, when the second set of separated beam pulses and the beamlets, when both simultaneously irradiate the at least one section of the silicon thin film, the second set of separated beam pulses and beamlets provide a combined intensity which is sufficient to melt the at least one irradiated section of the silicon thin film throughout an entire thickness of the section.

A system for processing a silicon thin film on a sample, comprising:

• a memory storing a computer program;
• and
• a processing arrangement executing the computer program to perform the following steps:
• (a) controlling an irradiation beam generator arrangement to provide first and second sets of irradiation beam pulses at a predetermined repetition rate,
• (b) causing the first set of beam pulses to be irradiated and pass at least a portion thereof through a mask to produce a plurality of beamlets, and
• (c) causing the second set of beam pulses and the beamlets to impinge and irradiate at least one section of the silicon thin film,
• wherein, when the second set of beam pulses and the beamlets simultaneously irradiate the at least one section of the silicon thin film, the second set of beam pulses and the beamlets provide a combined intensity which is sufficient to melt the at least one irradiated section of the silicon thin film throughout an entire thickness of the section.