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US 2004/0061546 A1Published application
High frequency switch
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsHiroshi Kushitani, Yasushi Nagata, Takeo Yasuho
Life of this patent
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Abstract
A high frequency switch configured particularly with two FET switches. One end of a second FET switch is connected between an I/O port and a reception port and the other end is ground. A strip line is connected between the second FET switch and the I/O port, and has the electrical length equivalent to {fraction (1/4 )} wavelength of the high frequency signal input from a transmission port.
Claims8
A high frequency switch comprising:
- a first FET switch connected between an input and output (I/O) port and a transmission port;
- a second FET switch whose one end is connected between said I/O port and a reception port and the other end is ground;
- a control port for controlling turning on and off of said first and second FET switches;
- and
- a strip line connected between one end of said second FET switch and said I/O port, said strip line having an electrical length equivalent to ¼ wavelength of a high frequency signal input from said transmission port.
2 more elements
A high frequency switch comprising:
- a first FET switch connected between an input and output (I/O) port and transmission port;
- a strip line connected between said I/O port and a reception port, said strip line having an electrical length equivalent to ¼ wavelength of a high frequency signal input from said transmission port;
- a second FET switch whose one end is connected to said strip line to a side of said reception port and the other end is ground;
- and
- a control port for controlling turning on and off of said first and second FET switches;
- wherein said strip line is formed in an inner layer of a dielectric multilayer board, and said first and second FET switches are mounted on a surface of said multilayer board as a high frequency device.
3 more elements
Dependencies are inferred from the claim text.