Nickel silicide - silicon nitride adhesion through surface passivation

A semiconductor device, comprising

• a. a substrate having a top surface that contains a silicon region;
• b. a silicide region having a top surface, formed outwardly from the top surface of the silicon region;
• c. a nitride region having a bottom surface, formed outwardly from the silicide region;
• and
• d. an interface between the nitride bottom surface and the silicide top surface that is substantially free of a silicon rich material that is substantially devoid of nitrogen.

A process of forming a semiconductor device, comprising

• a. providing a substrate having a top surface, at least a portion of the top surface including a silicon region;
• b. forming a layer of nickel outwardly from the top surface, adjacent to the top surface that includes the silicon region;
• c. forming a titanium nitride cap layer outwardly from the top surface, the cap layer covering at least a portion of the nickel layer;
• d. forming a nickel silicide region on the top surface by heating the substrate at about 290° C.;
• e. removing the titanium nitride layer and the residual nickel layer from the top surface;
• f. heating the substrate at about 500° C.;
• g. treating the top surface in a plasma reactor with a gaseous material that contains ammonia and is substantially free of silicon;
• and
• h. forming a silicon nitride layer outwardly from the top surface.